HOT ! 山崎瞬平（共）編／酸化物半導体CAAC-IGZOの物理と技術：LSIへの応用 東京大ら、3次元集積可能なメモリデバイスを開発：Snを添加したIGZO

東京大ら、3次元集積可能なメモリデバイスを開発：Snを添加したIGZO。
均一なナノ薄膜で酸化物半導体トランジスタを作製 東大、高集積化に。
シェール貯留層におけるCO₂吸着・貯留ポテンシャル | 東京大学大学院。
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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Lsi (Wiley-sid Series in Display Technology)2017 John Wiley and Sons酸化物半導体IGZOのLSI応用をまとめた書籍です。
酸化物半導体を触媒に用いたCO2のメタノール変換 | Science Tokyo。
This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process.